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BCR08PN
NPN/PNP Silicon Digital Transistor Array
4
Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor (R1=2.2k, R2=47k)
5 6

2 1
3
VPS05604
Tape loading orientation
Top View 654 W1s 123 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side
EHA07193
Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device
C1 6
B2 5
E2 4
R2 R1 TR1 R2 1 E1 2 B1 3 C2
EHA07176
TR2 R1
Type BCR08PN
Maximum Ratings Parameter
Marking WFs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 10 100 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 C Junction temperature Storage temperature
mA mW C
Thermal Resistance Junction - soldering point 1) RthJS
140
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BCR08PN
Electrical Characteristics at TA=25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb fT R1 R1 /R2 Vi(on) Vi(off) VCEsat hFE IEBO ICBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit
50 50 70 0.4 0.5 1.5 0.042
2.2 0.047
100 164 0.3 0.8 1.1 2.9
V
nA A V
k
0.052 -
-
170 2
-
MHz pF
1) Pulse test: t < 300s; D < 2%
2
Nov-29-2001
BCR08PN NPN Type
DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration)
10 3
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
10 2
mA
hFE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0.0
0.1
0.2
0.3
V
0.5
IC
VCEsat
Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0 10 1
IC
IC
10 -1 10 0 10 -2 10 -1 -1 10
0 1
10
10
V
10
2
10 -3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1.0
Vi(on)
Vi(off)
3
Nov-29-2001
BCR08PN PNP Type
DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration)
10 3
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
10 2
mA
hFE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0.0
0.1
0.2
0.3
V
0.5
IC
VCEsat
Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage V i(off) = f (IC) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0 10 1
IC
IC
10 -1 10 0 10 -2 10 -1 -1 10
0 1
10
10
V
10
2
10 -3 0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
1.0
Vi(on)
Vi(off)
4
Nov-29-2001
BCR08PN
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
150
100
50
0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
Ptotmax / PtotDC
-
10 2
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Nov-29-2001

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